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NVMFS6H801NT1G

Part No NVMFS6H801NT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 23A/157A 5DFN
Datasheet
Sample
Rohs State rohs
ECAD Module
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Win Source Part Number 2000493-NVMFS6H801NT1G
Win Source Part Number Cross
Manufacturer onsemi
Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Series Automotive, AEC-Q101
Package Tape & Reel (TR) Cut Tape (CT)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 23A (Ta), 157A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Ultra Librarian 3D Model Ultra Librarian NVMFS6H801NT1G CAD Model

Description

Introducing the NVMFS6H801NT1G Power MOSFET by ON Semiconductor

The NVMFS6H801NT1G is a state-of-the-art Power MOSFET brought to you by ON Semiconductor, a leader in energy-efficient innovations. This high-performance, N-channel MOSFET is designed to meet the rigorous demands of modern electronic applications, offering an optimal balance between conduction and switching efficiencies.

Key Features

  • Low R<sub>DS(on): The device boasts an exceptionally low drain-to-source on-resistance, which translates into reduced conduction losses and improved overall efficiency.
  • High Continuous Drain Current (I<sub>D): With its ability to handle a high amount of continuous current, this MOSFET is suitable for demanding power applications.
  • Enhanced Thermal Performance: The NVMFS6H801NT1G is encapsulated in a highly thermally efficient package, ensuring reliable operation even under high-temperature conditions.
  • Single Pulse Avalanche Energy Rated (E<sub>as): This device can withstand high-energy pulses in the avalanche and commutation modes, offering robustness and reliability.

Applications

The NVMFS6H801NT1G is a versatile component that can be used across a wide range of applications, including:

  • Power supply units
  • DC-DC converters
  • Motor drives
  • Automotive systems
  • Computing and server systems

Technical Specifications

With a 68V drain-to-source voltage (V<sub>DS), the NVMFS6H801NT1G is well-suited for systems that require a high voltage threshold. Its advanced silicon technology ensures minimal gate charge (Q<sub>g) and gate-to-drain charge (Q<sub>gd), which are critical for fast switching applications.

Quality and Environmental Compliance

ON Semiconductor is committed to environmental stewardship. The NVMFS6H801NT1G is manufactured with a lead-free finish and is RoHS compliant, making it an environmentally responsible choice for your electronic designs.

In summary, the NVMFS6H801NT1G Power MOSFET from ON Semiconductor is a high-efficiency, robust and reliable solution for your power management needs. Its advanced features and compliance with environmental standards make it a smart and sustainable choice for a wide array of electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
17+ $2.9949 $50.9133
41+ $2.4574 $100.7534
64+ $2.3806 $152.3584
87+ $2.3038 $200.4306
113+ $2.2270 $251.6510
151+ $1.9966 $301.4866
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 43,500 pieces
MOQ: 17 pcs
Order Increment : 1 pcs
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