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NVMFS6H818NT1G

Part No NVMFS6H818NT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description SINGLE N-CHANNEL POWER MOSFET 80 / N-Channel 80 V 20A (Ta), 123A (Tc) 3.8W (Ta), 136W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer onsemi
Packaging Bulk
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 20A, 123A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 190µA
Gate Charge (Qg) (Max) @ Vgs 46 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3100 pF @ 40 V
Power Dissipation (Max) 3.8W, 136W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL)
Case / Package 8-PowerTDFN, 5 Leads
Moisture Sensitivity Level (MSL) Vendor Undefined
REACH Status REACH Unaffected
Other Part Number 2156-NVMFS6H818NT1G-488
Standard Package 1
Win Source Part Number 1324751-NVMFS6H818NT1G
Ultra Librarian 3D Model Ultra Librarian NVMFS6H818NT1G CAD Model

Description

The ON Semiconductor NVMFS6H818NT1G is a high-performance, single N-channel power MOSFET that is designed to meet a wide range of power management requirements. This MOSFET is part of ON Semiconductor's extensive portfolio of energy-efficient devices, offering a compact and efficient solution for switching applications in modern electronic systems.

Key Features

  • Low On-Resistance: The NVMFS6H818NT1G features a low on-resistance (RDS(on)), which minimizes conduction losses and improves overall efficiency, making it ideal for high-efficiency power supplies and DC-DC converters.
  • High Continuous Drain Current: This MOSFET can handle a high continuous drain current (ID), allowing for robust performance in demanding applications.
  • High-Temperature Performance: With an ability to operate at high temperatures, the NVMFS6H818NT1G is suitable for applications that experience thermal challenges.
  • Fast Switching Speed: The device's fast switching speed reduces switching losses and enables high-frequency operation, which is critical for reducing the size of passive components in power supply designs.
  • Low Gate Charge: A low gate charge (QG) facilitates faster switching and reduces the power required to drive the MOSFET, contributing to overall system efficiency.

Applications

The NVMFS6H818NT1G is versatile and can be used in a variety of applications, including:

  • DC-DC Converters
  • Power Supply Modules
  • Motor Drives
  • Battery Management Systems
  • Load Switches
  • Automotive Applications

Package and Reliability

Enclosed in a compact 5x6mm PDFN package, the NVMFS6H818NT1G is designed to save space on the PCB while providing excellent thermal performance. The device is also characterized for moisture sensitivity level 1 (MSL1), ensuring reliability and longevity in humid environments.

Environmental Compliance

ON Semiconductor is committed to environmental stewardship. The NVMFS6H818NT1G is RoHS compliant and free from harmful substances, aligning with global initiatives for reducing the environmental impact of electronic components.

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $2.7901 $50.2218
44+ $2.2893 $100.7292
68+ $2.2177 $150.8036
94+ $2.1462 $201.7428
121+ $2.0747 $251.0387
162+ $1.8600 $301.3200
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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