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NVMFS6H824NWFT1G

Part No NVMFS6H824NWFT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 19A/103A 5DFN / N-Channel 80 V 19A (Ta), 103A (Tc) 3.8W (Ta), 115W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
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Category Discrete Semiconductor Products>Transistors>FETs, MOSFETs>Single FETs, MOSFETs
Mfr ON Semiconductor
Series Automotive, AEC-Q101
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 19A (Ta), 103A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 140µA
Gate Charge (Qg) (Max) @ Vgs 38 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2470 pF @ 40 V
FET Feature -
Power Dissipation (Max) 3.8W (Ta), 115W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads
Base Product Number NVMFS6
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 1,500 pcs
Win Source Part Number 1383096-NVMFS6H824NWFT1G
Ultra Librarian 3D Model Ultra Librarian NVMFS6H824NWFT1G CAD Model

Description

The NVMFS6H824NWFT1G is a high-performance Power MOSFET brought to you by ON Semiconductor, a renowned leader in power management and precision technology. This MOSFET is designed to meet a wide range of applications, offering efficiency and reliability for power switching circuits in modern electronic devices.

Key Features

  • Low On-Resistance: The device features an exceptionally low on-resistance, which translates to reduced losses and improved energy efficiency during operation.
  • High Current Capacity: With the ability to handle significant current, this MOSFET is suitable for high-power applications.
  • Single N-Channel: The single N-Channel configuration simplifies circuit design and integration.
  • Power Trench® Technology: ON Semiconductor's innovative Power Trench® technology minimizes on-state resistance while maintaining superior switching performance, which is critical for power efficiency.
  • Fast Switching Speed: The fast switching capabilities of the NVMFS6H824NWFT1G make it ideal for high-frequency applications, ensuring minimal power loss and heat generation.
  • Thermal Management: Enhanced thermal performance allows for better management of heat dissipation, contributing to the longevity and reliability of the MOSFET.

Applications

This Power MOSFET is versatile and can be used in various applications, including:

  • DC/DC Converters
  • Motor Drives
  • Power Supply Units
  • Battery Management Systems
  • Load Switches
  • Automotive Applications

Product Specifications

The NVMFS6H824NWFT1G operates with a continual drain current of 100 A and has a maximum power dissipation of 3.8 W. Its threshold voltage is typically 2.1 V, and it can withstand a maximum drain-source voltage of 80 V. The device is also housed in a compact 5x6 mm footprint, making it suitable for space-constrained applications.

With its robust design and cutting-edge technology, the NVMFS6H824NWFT1G from ON Semiconductor stands out as a top choice for designers and engineers looking to enhance the performance and efficiency of their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.2838 $57.7710
110+ $1.0534 $115.8740
170+ $1.0205 $173.4850
235+ $0.9875 $232.0625
305+ $0.9546 $291.1530
405+ $0.8559 $346.6395
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 90 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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