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NVMYS011N04CTWG

Part No NVMYS011N04CTWG
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 13A/35A 4LFPAK / N-Channel 40 V 13A (Ta), 35A (Tc) 3.8W (Ta), 28W (Tc) Surface Mount LFPAK4 (5x6)
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer onsemi
Packaging Reel - TR
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 13A, 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 12mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 3.5V @ 20µA
Gate Charge (Qg) (Max) @ Vgs 7.9 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 420 pF @ 25 V
Power Dissipation (Max) 3.8W, 28W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Surface Mount
Supplier Device Package LFPAK4 (5x6)
Case / Package SOT-1023, 4-LFPAK
Base Product Number NVMYS011
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number NVMYS011N04CTWGOSDKR,NVMYS011N04CTWGOS,NVMYS011N04CTWGOSCT,NVMYS011N04CTWGOSTR,2832-NVMYS011N04CTWG-488,NVMYS011N04CTWGOS-ND
Standard Package 3,000
Win Source Part Number 1324362-NVMYS011N04CTWG
Ultra Librarian 3D Model Ultra Librarian NVMYS011N04CTWG CAD Model

Description

ON Semiconductor NVMYS011N04CTWG Overview

The NVMYS011N04CTWG is a cutting-edge power MOSFET from ON Semiconductor, renowned for its exceptional efficiency and performance in a wide range of applications. This device is part of ON Semiconductor's portfolio of energy-efficient power management components, designed to meet the rigorous demands of modern electronic systems.

With a drain-to-source voltage (V<sub>DS) of 40V, the NVMYS011N04CTWG is capable of handling high voltage operations with ease. Its continuous drain current (I<sub>D) of 180A underscores the MOSFET's ability to support high current applications, making it an ideal choice for power-intensive tasks. The device boasts a low on-resistance (R<sub>DS(on)) of just 1.1mΩ at V<sub>GS = 10V, which translates to reduced conduction losses and improved overall efficiency.

The NVMYS011N04CTWG is housed in a compact 5x6mm DFN8 package, which not only saves valuable board space but also offers excellent thermal performance. The package is designed to maximize heat dissipation, ensuring that the MOSFET operates within safe temperature ranges even under high current conditions.

This MOSFET features a rugged body diode, which provides fast recovery time and low reverse recovery charge (Q<sub>rr). This characteristic is particularly beneficial in applications where switching speed is critical, such as in synchronous rectification in SMPS (Switched Mode Power Supplies), motor drives, and other power conversion systems.

The NVMYS011N04CTWG is also characterized by its low gate charge (Q<sub>G), which enhances the switching performance. This results in reduced switching losses and enables high-frequency operation, a crucial factor in minimizing the size of passive components and improving power density.

In summary, the ON Semiconductor NVMYS011N04CTWG power MOSFET is a robust, high-performance component that is suitable for a multitude of applications requiring high efficiency, reliability, and power density. Its advanced features and compact footprint make it an excellent choice for designers looking to optimize their power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
160+ $0.3678 $58.8480
385+ $0.3018 $116.1930
595+ $0.2924 $173.9780
820+ $0.2830 $232.0600
1,060+ $0.2735 $289.9100
1,415+ $0.2452 $346.9580
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,610 pieces
MOQ: 160 pcs
Order Increment : 1 pcs
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