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RFD10P03LSM

Part No RFD10P03LSM
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 10A TO252-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr ON Semiconductor
Package Tube
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Rds On (Max) @ Id, Vgs 200mOhm @ 10A, 5V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 1035 pF @ 25 V
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number RFD10
Standard Package 75 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 659965-RFD10P03LSM
Ultra Librarian 3D Model Ultra Librarian RFD10P03LSM CAD Model

Description

Introducing the RFD10P03LSM from ON Semiconductor

ON Semiconductor presents the RFD10P03LSM, a state-of-the-art P-Channel MOSFET that is engineered to deliver high performance and reliability for a wide range of applications. This power MOSFET is designed to meet the needs of modern electronic circuits, offering a robust solution for power management tasks.

Key Features

  • Low On-Resistance: The RFD10P03LSM features a low on-resistance of 0.35 ohms, ensuring efficient operation and minimal power loss during switching, which is crucial for maintaining energy efficiency in electronic systems.
  • High Voltage Tolerance: With a drain-to-source voltage (Vdss) of -30V, this MOSFET can handle significant voltage levels, making it suitable for a variety of demanding applications.
  • High Current Capacity: It can support a continuous drain current (Id) of -10A, allowing it to drive high current loads with ease.
  • Thermal Protection: The device includes an integrated thermal shutdown feature to protect against over-temperature conditions, ensuring long-term reliability and safety.
  • Logic Level Gate Drive: The MOSFET can be driven by logic-level voltages, which makes it compatible with contemporary microcontroller and logic circuits without the need for additional level shifting.

Applications

The RFD10P03LSM is versatile and can be used in a variety of applications, including:

  • Power supply circuits
  • DC/DC converters
  • Motor control systems
  • Load switching
  • Battery management systems
  • Automotive applications

Quality and Reliability

ON Semiconductor is known for its commitment to quality, and the RFD10P03LSM is no exception. It is manufactured to the highest standards, ensuring that it meets the rigorous demands of industrial and automotive industries. With its superior performance and dependable operation, the RFD10P03LSM is an excellent choice for designers looking to enhance the efficiency and reliability of their power management systems.

Whether you're developing a new project or upgrading an existing one, the RFD10P03LSM from ON Semiconductor offers the performance and reliability you need to ensure your products stand out in the competitive electronics market.

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