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RFD12N06RLE

Part No RFD12N06RLE
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 18A IPAK
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr ON Semiconductor
Series UltraFET™
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 63mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 485 pF @ 25 V
Power Dissipation (Max) 40W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number RFD12
Standard Package 75 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 659966-RFD12N06RLE
Ultra Librarian 3D Model Ultra Librarian RFD12N06RLE CAD Model

Description

Introducing the RFD12N06RLE MOSFET by ON Semiconductor

The RFD12N06RLE is a robust N-Channel MOSFET brought to you by ON Semiconductor, a leader in energy-efficient innovations. This power MOSFET is designed to meet the high-performance requirements of modern electronic circuits, providing efficient power management and switching with low on-resistance and a high degree of reliability.

Key Features

  • Low On-Resistance: The RFD12N06RLE boasts a low on-state resistance, which translates to reduced power loss and improved efficiency in operation.
  • High Current Capacity: With the ability to handle continuous drain currents up to 12A, this MOSFET is suitable for high-power applications.
  • Voltage Rating: This device is capable of withstanding a drain-to-source voltage of up to 60V, making it ideal for a range of mid-voltage applications.
  • Logic Level Gate Drive: The MOSFET can be driven directly from logic level voltages, simplifying the interface with microcontrollers and reducing the need for additional driver circuitry.
  • TO-252 (DPAK) Package: The RFD12N06RLE is available in a surface-mount TO-252 (DPAK) package, which is widely used and suitable for automated assembly processes.

Applications

The RFD12N06RLE is versatile and can be used in a variety of applications, including but not limited to:

  • Power supply circuits
  • DC to DC converters
  • Motor control systems
  • Automotive applications
  • Switching regulators
  • LED lighting solutions

Reliability and Performance

ON Semiconductor's commitment to quality ensures that the RFD12N06RLE MOSFET meets the stringent standards required for industrial and automotive applications. The device's high reliability and performance under varying conditions make it a preferred choice for designers looking to optimize their power management solutions.

In summary, the RFD12N06RLE from ON Semiconductor is a powerful, efficient, and reliable component that offers a compact solution for a wide range of power switching applications. Its combination of low on-resistance, high current capability, and ease of use make it an excellent choice for engineers and designers seeking to enhance their systems with superior power management capabilities.

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Pricing & Ordering

Quantity Unit Price Ext. Price
160+ $0.3638 $58.2080
390+ $0.2991 $116.6490
600+ $0.2899 $173.9400
825+ $0.2807 $231.5775
1,065+ $0.2714 $289.0410
1,430+ $0.2426 $346.9180
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,280 pieces
MOQ: 160 pcs
Order Increment : 1 pcs
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