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SGB8206ANTF4G

Part No SGB8206ANTF4G
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Description IGBT 20A, 350V, N-CHANNEL
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr ON Semiconductor
Package Bulk
Product Status Obsolete
Voltage - Collector Emitter Breakdown (Max) 390 V
Current - Collector (Ic) (Max) 20 A
Vce(on) (Max) @ Vge, Ic 1.9V @ 4.5V, 20A
Power - Max 150 W
Input Type Logic
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK
Base Product Number SGB8206
Standard Package 700 pcs
ECCN EAR99
HTSUS 0000.00.0000
Win Source Part Number 734324-SGB8206ANTF4G
Ultra Librarian 3D Model Ultra Librarian SGB8206ANTF4G CAD Model

Description

ON Semiconductor SGB8206ANTF4G Product Overview

The SGB8206ANTF4G is a high-performance, energy-efficient N-Channel MOSFET designed and manufactured by ON Semiconductor, a renowned leader in the semiconductor industry. This compact and robust power MOSFET is specifically engineered to cater to a wide range of power switching applications that demand low on-resistance, high switching speed, and exceptional thermal performance.

Key Features

  • Low On-Resistance: The SGB8206ANTF4G boasts an impressively low on-resistance, which translates to reduced conduction losses and improved overall efficiency in power conversion applications.
  • High Switching Speed: With its fast switching capabilities, this MOSFET is ideal for high-frequency power switching, which is critical for applications such as DC-DC converters, motor control, and power management systems.
  • Enhanced Thermal Performance: The device is encapsulated in a compact TF4G package that provides excellent thermal characteristics, ensuring reliable operation even under high-temperature conditions.
  • High Drain-Source Voltage (V<sub>DS): It supports a high drain-source voltage, allowing it to handle higher power levels and making it suitable for a variety of demanding applications.
  • Low Gate Charge (Q<sub>G): The low gate charge of the SGB8206ANTF4G ensures efficient gate switching, which is crucial for minimizing switching losses.

Applications

The versatility of the SGB8206ANTF4G MOSFET makes it an excellent choice for a multitude of applications, including:

  • Power supply units
  • DC-DC converters
  • Battery management systems
  • Motor drives and controllers
  • LED lighting solutions
  • Load switches

ON Semiconductor's SGB8206ANTF4G is designed to meet the stringent requirements of modern electronic systems, offering a perfect blend of power efficiency, reliability, and performance. Its advanced features enable designers to create compact, energy-saving solutions that are both cost-effective and high-performing. With its robust design and cutting-edge technology, the SGB8206ANTF4G stands out as a superior choice for engineers looking to enhance their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.8577 $65.0195
80+ $1.5244 $121.9520
120+ $1.4767 $177.2040
165+ $1.4291 $235.8015
210+ $1.3814 $290.0940
280+ $1.2385 $346.7800
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,900 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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