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SGL40N150DTU

Part No SGL40N150DTU
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr onsemi
Package Tube
Product Status Obsolete
Voltage - Collector Emitter Breakdown (Max) 1500 V
Current - Collector (Ic) (Max) 40 A
Current - Collector Pulsed (Icm) 120 A
Vce(on) (Max) @ Vge, Ic 4.7V @ 15V, 40A
Power - Max 200 W
Input Type Standard
Gate Charge 140 nC
Reverse Recovery Time (trr) 300 ns
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Supplier Device Package TO-264-3
Base Product Number SGL40
Standard Package 25
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277409-SGL40N150DTU
Ultra Librarian 3D Model Ultra Librarian SGL40N150DTU CAD Model

Description

ON Semiconductor SGL40N150DTU IGBT

The SGL40N150DTU is a high-performance insulated-gate bipolar transistor (IGBT) developed by ON Semiconductor, a renowned leader in energy-efficient innovations. This IGBT is designed to meet the demands of a wide range of power electronics applications, particularly those requiring high efficiency, fast switching, and reliability.

With a collector-emitter voltage (Vce) of 1500V and a continuous collector current (Ic) rating of 40A at 25°C, the SGL40N150DTU is capable of handling high power levels. The device is optimized for applications that require a delicate balance between switching speed and saturation voltage, including but not limited to motor drives, uninterruptible power supplies (UPS), solar inverters, and induction heating systems.

The SGL40N150DTU features a co-packaged freewheeling diode, which provides additional protection against reverse voltage spikes, thereby enhancing the overall robustness of the system. The IGBT's low on-state voltage drop and low switching losses ensure that the device operates with high efficiency, which is critical for reducing energy consumption and heat generation in power-intensive applications.

This IGBT is housed in a TO-247 package, which is widely recognized for its high thermal performance and ability to dissipate heat effectively. The package's design allows for easy integration into various circuit designs and provides a reliable mechanical and electrical connection.

ON Semiconductor has incorporated advanced manufacturing technologies and design techniques to ensure that the SGL40N150DTU delivers outstanding performance and reliability. The device undergoes rigorous testing and quality control measures to ensure it meets the stringent requirements of the industry.

In summary, the ON Semiconductor SGL40N150DTU IGBT is a powerful, efficient, and reliable component suitable for a variety of high-voltage and high-current applications. Its combination of high-speed switching, low power losses, and robust construction makes it an excellent choice for designers looking to optimize their power management solutions.

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