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SMMBFJ175LT1G

Part No SMMBFJ175LT1G
Manufacturer ON Semiconductor
Catalog JFETs (Junction Field Effect)
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - JFETs
Mfr onsemi
Series Automotive, AEC-Q101
Package Tape & Reel (TR)
FET Type P-Channel
Voltage - Breakdown (V(BR)GSS) 30 V
Current - Drain (Idss) @ Vds (Vgs=0) 7 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id 3 V @ 10 nA
Input Capacitance (Ciss) (Max) @ Vds 11pF @ 10V (VGS)
Resistance - RDS(On) 125 Ohms
Power - Max 225 mW
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236)
Base Product Number SMMBFJ175
Standard Package 3,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 1277321-SMMBFJ175LT1G
Ultra Librarian 3D Model Ultra Librarian SMMBFJ175LT1G CAD Model

Description

The SMMBFJ175LT1G from ON Semiconductor is a high-performance, P-Channel Junction Field Effect Transistor (JFET) designed for a wide range of applications. This JFET is a preferred choice for designers who require a reliable component that provides efficient voltage control in their electronic circuits.

Key Features

  • Low On-Resistance: The device features a low on-resistance, which enhances its efficiency and reduces power loss during operation.
  • High Input Impedance: With a high input impedance, the SMMBFJ175LT1G minimizes the loading effect on preceding stages, making it ideal for high-impedance applications such as audio amplifiers or analog switches.
  • Low Leakage Current: The low leakage current ensures minimal power consumption when the device is in the off state, contributing to energy savings and longer battery life in portable applications.
  • Fast Switching: The JFET's fast switching characteristics make it suitable for high-speed and high-frequency applications.

Applications

The SMMBFJ175LT1G is versatile and can be used in various applications, including:

  • Switching and amplifier circuits
  • Analog switches
  • Choppers
  • Commutable filters
  • Low-noise audio amplifiers

Product Specifications

Some of the technical specifications of the SMMBFJ175LT1G include:

  • Drain-Source Voltage (Vds): -25V
  • Gate-Source Voltage (Vgs): ±25V
  • Continuous Drain Current (Id): -10mA
  • Power Dissipation (Pd): 225mW
  • Operating Temperature Range: -55°C to +150°C

Quality and Reliability

ON Semiconductor is known for its commitment to quality and reliability, and the SMMBFJ175LT1G is no exception. It is manufactured in compliance with strict industry standards, ensuring high reliability and performance for critical applications. Additionally, this JFET comes in a compact SOT-23 package, making it suitable for space-constrained applications.

Ordering Information

The SMMBFJ175LT1G is available in tape and reel packaging, facilitating easy integration into automated manufacturing processes. For detailed ordering and product information, please refer to the ON Semiconductor website or contact their sales representatives.

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.7335 $51.3450
170+ $0.6018 $102.3060
260+ $0.5830 $151.5800
355+ $0.5642 $200.2910
460+ $0.5454 $250.8840
615+ $0.4890 $300.7350
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,000 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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