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SMMBT4401LT1G

Part No SMMBT4401LT1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description Switching Transistor NPN Silicon | TRANS NPN 40V 0.6A SOT23
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel
Transistor Type NPN
Current - Collector (Ic) (Maximum) 600mA
Voltage - Collector Emitter Breakdown (Maximum) 40V
Vce Saturation (Maximum) at Ib, Ic 750mV at 50mA, 500mA
DC Current Gain (hFE) (Minimum) at Ic, Vce 100 at 150mA, 1V
Maximum Power 300mW
Frequency - Transition 250MHz
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Manufacturer Package TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236)
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 720442-SMMBT4401LT1G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SMMBT4401LT1G CAD Model

Description

The SMMBT4401LT1G by ON Semiconductor is a high-performance NPN bipolar junction transistor (BJT) designed for use in a wide range of electronic applications. This versatile transistor is particularly suitable for switching and amplification purposes, making it a valuable component in both digital and analog circuits.

Key Features:

  • Device Type: NPN Bipolar Junction Transistor (BJT)
  • Package: SOT-23 surface-mount package, which offers a compact footprint for designs where space is at a premium.
  • Collector-Emitter Voltage (Vceo): 40V, providing adequate voltage handling capability for a variety of applications.
  • Collector Current (Ic): Capable of handling continuous collector current up to 600mA, making it suitable for moderate power applications.
  • Transition Frequency (ft): 250MHz, enabling high-speed switching and excellent frequency response for RF applications.
  • Gain Bandwidth Product (fT): 300MHz, which indicates good amplification characteristics over a wide frequency range.
  • DC Current Gain (hFE): Range from 100 to 300, providing a consistent and predictable gain for signal amplification.
  • Operating Temperature Range: -55°C to +150°C, ensuring reliability and performance under extreme conditions.
  • RoHS Compliant: Meets environmental standards by avoiding the use of hazardous substances.

The SMMBT4401LT1G is designed with a focus on reliability and efficiency. Its robust construction ensures stability and long-term performance, which is essential for industrial, commercial, and consumer electronics. Whether you are designing power management systems, signal processing units, or general-purpose amplifiers, the SMMBT4401LT1G offers a blend of performance and practicality that can meet the needs of your project.

ON Semiconductor's commitment to quality makes the SMMBT4401LT1G a trustworthy choice for engineers and designers looking for a reliable NPN transistor. With its excellent electrical characteristics and compact size, it stands out as a go-to component for a multitude of electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
540+ $0.0933 $50.3820
1,310+ $0.0766 $100.3460
2,025+ $0.0742 $150.2550
2,790+ $0.0718 $200.3220
3,605+ $0.0694 $250.1870
4,825+ $0.0622 $300.1150
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 120,000 pieces
MOQ: 540 pcs
Order Increment : 1 pcs
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