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SMUN5113T1G

Part No SMUN5113T1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 202MW SC70-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity PNP - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 47k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 5mA, 10V
Max Vce (sat) 250mV @ 300μA, 10mA
Collector Cut-off Current(Max) 500nA
Maximum Power Dissipation 202mW
Mounting SMD (SMT)
Case / Package SC-70-3 (SOT323)
Win Source Part Number 211852-SMUN5113T1G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SMUN5113T1G CAD Model

Description

ON Semiconductor SMUN5113T1G - NPN Bipolar Transistor

The SMUN5113T1G is a high-performance NPN bipolar junction transistor (BJT) from ON Semiconductor, a leading provider of semiconductor-based solutions. This device is designed for general-purpose amplifier and switching applications, delivering reliable and efficient performance in a compact SOT-23 package. With its versatile characteristics, the SMUN5113T1G is suitable for a wide range of electronic circuits, making it a popular choice among engineers and designers.

Key Features and Benefits

  • High Current Capacity: The SMUN5113T1G can handle a continuous collector current (I<sub>C) of up to 500 mA, making it suitable for driving moderate loads in electronic circuits.
  • Low Voltage Operation: With a collector-emitter voltage (V<sub>CEO) of 50V, this transistor is optimized for low voltage applications, providing stable operation and reducing the risk of voltage breakdown.
  • High Gain Bandwidth Product: The device offers a transition frequency (f<sub>T) of 100 MHz, which is indicative of its ability to amplify signals at high frequencies, making it ideal for RF and high-speed signal processing applications.
  • Energy Efficient: The SMUN5113T1G is designed for low-power consumption, helping to minimize energy usage in electronic devices and contributing to longer battery life in portable applications.
  • Compact Footprint: The small SOT-23 package allows for high-density mounting and saves valuable board space, which is crucial for modern, space-constrained electronic designs.
  • RoHS Compliant: This transistor meets the requirements of the RoHS directive, ensuring that it is free from hazardous substances and suitable for use in environmentally sensitive applications.

Applications

The versatility of the SMUN5113T1G makes it an excellent choice for a myriad of applications, including:

  • General-purpose amplification
  • Switching circuits
  • Audio amplifiers
  • Signal processing
  • Driver stages in hi-fi systems
  • Portable electronics
  • Power management

With its combination of performance, efficiency, and compact size, the SMUN5113T1G from ON Semiconductor is an ideal choice for designers seeking a reliable NPN transistor for their electronic projects.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,575+ $0.0367 $57.8025
3,835+ $0.0302 $115.8170
5,930+ $0.0293 $173.7490
8,165+ $0.0283 $231.0695
10,550+ $0.0274 $289.0700
14,155+ $0.0245 $346.7975
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,940 pieces
MOQ: 1575 pcs
Order Increment : 1 pcs
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