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SS9012GTA

Part No SS9012GTA
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr onsemi
Package Cut Tape (CT),Tape & Box (TB)
Product Status Obsolete
Transistor Type PNP
Current - Collector (Ic) (Max) 500 mA
Voltage - Collector Emitter Breakdown (Max) 20 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 112 @ 50mA, 1V
Power - Max 625 mW
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package TO-92-3
Base Product Number SS9012
Other Names SS9012GTA,SS9012GTACT,SS9012GTATB
Standard Package 2,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 1278647-SS9012GTA
Ultra Librarian 3D Model Ultra Librarian SS9012GTA CAD Model

Description

ON Semiconductor SS9012GTA PNP Bipolar Transistor

The SS9012GTA from ON Semiconductor is a high-quality PNP bipolar junction transistor designed for general-purpose amplifier and switching applications. This versatile component is a fundamental building block in electronic circuits, renowned for its reliable performance and durability. The SS9012GTA is housed in a TO-92 package, which is widely preferred for through-hole designs due to its ease of handling and soldering.

Key Features

  • Transistor Polarity: PNP - This indicates that the SS9012GTA is designed to control the flow of holes as charge carriers, making it suitable for use in the negative side of the circuit.
  • Collector-Emitter Voltage (Vceo): 25V - This rating ensures that the transistor can handle moderate voltage applications without the risk of breakdown.
  • Collector Current (Ic): 500mA - The SS9012GTA can control a half-ampere of current, making it ideal for a variety of small to medium power requirements.
  • DC Current Gain (hFE): 64 to 300 - A measure of the transistor's amplification factor, indicating its efficiency in amplifying a signal.
  • Power Dissipation (Pd): 625mW - This value represents the maximum power the SS9012GTA can dissipate without exceeding its maximum junction temperature.

Applications

The SS9012GTA is commonly employed in a wide array of applications, including but not limited to:

  • Audio amplifiers and pre-amplifiers
  • Signal processing
  • Switching circuits
  • Driver stages in hi-fi systems and TVs
  • Various types of consumer electronics

Quality and Reliability

ON Semiconductor is known for their commitment to quality, and the SS9012GTA is no exception. Each transistor is manufactured to meet rigorous industry standards, ensuring consistent performance and reliability. Whether for hobby projects or commercial electronics, the SS9012GTA is a dependable choice that engineers and technicians can trust for their circuit designs.

With its balanced combination of voltage, current, and power specifications, the SS9012GTA is a versatile component that can be used in a multitude of electronic applications, making it a valuable addition to any electronic component inventory.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2,105+ $0.0275 $57.8875
5,105+ $0.0226 $115.3730
7,895+ $0.0219 $172.9005
10,870+ $0.0213 $231.5310
14,125+ $0.0205 $289.5625
18,870+ $0.0184 $347.2080
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,019 pieces
MOQ: 2105 pcs
Order Increment : 1 pcs
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