ON Semiconductor STB4N80ET4 MOSFET Overview

The STB4N80ET4 is a high-performance, N-channel MOSFET brought to you by ON Semiconductor, a leader in energy-efficient innovations. This power MOSFET is designed to meet a wide range of applications, offering a perfect balance of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness.

Key Features

• Voltage Rating: The STB4N80ET4 has a drain-to-source voltage (V<sub>DS) of 800V, making it suitable for high-voltage applications.
• Current Capacity: It can handle a continuous drain current (I<sub>D) of up to 4A, ensuring reliable performance in a variety of circuits.
• Low On-Resistance: The device features an on-resistance (R<sub>DS(on)) of 3.0 Ohms, which helps to minimize conduction losses and improve efficiency.
• Fast Switching: The fast switching capability of the STB4N80ET4 is ideal for applications requiring high-speed operation.
• High Avalanche Energy: With an avalanche energy rating (E<sub>AS), this MOSFET can withstand high-energy pulses in the avalanche and commutation modes.
• TO-263 Package: The STB4N80ET4 comes in a durable TO-263 package, offering a robust and compact solution for PCB layouts.

Applications

The versatile nature of the STB4N80ET4 MOSFET allows it to be used in a multitude of applications, including:

• Switch Mode Power Supplies (SMPS)
• Power Factor Correction (PFC) circuits
• Electronic Lamp Ballasts
• DC-AC Inverters for Uninterruptible Power Supplies (UPS)
• High-efficiency DC-DC converters

Quality and Reliability

ON Semiconductor is committed to providing high-quality products. The STB4N80ET4 MOSFET is manufactured with state-of-the-art technology, ensuring reliability and performance that meets the industry standards. The device is RoHS compliant, adhering to environmental directives.

Conclusion

Whether you're designing power management systems or looking to enhance the efficiency of your existing applications, the STB4N80ET4 from ON Semiconductor is an excellent choice. By integrating this MOSFET into your designs, you can achieve improved power density, lower losses, and enhanced overall performance.