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STDV3055L104T4G

Part No STDV3055L104T4G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 12A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 20nC @ 5V
Max Input Capacitance 440pF @ 25V
Maximum Gate-Source Voltage ±15V
Power Dissipation (Max) 1.5W (Ta), 48W (Tj)
Maximum Rds On at Id,Vgs 104 mOhm @ 6A, 5V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1083868-STDV3055L104T4G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STDV3055L104T4G CAD Model

Description

The STDV3055L104T4G from ON Semiconductor is a state-of-the-art MOSFET designed for high-efficiency power management applications. This device is a testament to ON Semiconductor's commitment to providing innovative solutions that meet the evolving needs of the electronics industry.

Key Features

  • Low Threshold Voltage: The device features a low threshold voltage, which ensures low on-state resistance and reduces conduction losses, making it ideal for low voltage applications.
  • High Continuous Drain Current: With a high continuous drain current of 12 A, this MOSFET can handle significant power without overheating, ensuring reliability and performance.
  • Power Dissipation: STDV3055L104T4G boasts a power dissipation of 1.4 W, which contributes to its ability to manage power efficiently in compact spaces.
  • Low On-Resistance: The device offers an ultra-low on-resistance of 55 mΩ, which minimizes losses and improves overall efficiency.
  • Enhanced Durability: The MOSFET is designed with robustness in mind, featuring a maximum junction temperature of 150°C, which allows it to operate reliably in demanding conditions.
  • Surface-Mount Package: Packaged in a compact SOT-223 surface-mount package, the STDV3055L104T4G is suitable for automated assembly processes and saves valuable board space.

Applications

The STDV3055L104T4G is versatile and can be used in a variety of applications, including:

  • DC/DC Converters
  • Power Management Circuits
  • Battery Powered Devices
  • Load Switches
  • Motor Control Systems

Environmental and Quality Certifications

ON Semiconductor ensures that the STDV3055L104T4G meets rigorous environmental and quality standards. The device is compliant with RoHS regulations, which means it is free from hazardous substances. Additionally, it is manufactured under ISO 9001 quality management systems, guaranteeing high manufacturing standards and reliability.

In summary, the STDV3055L104T4G MOSFET by ON Semiconductor is an excellent choice for designers looking for a high-performance, durable, and efficient power management solution. Its advanced features and compact design make it a valuable component in a wide range of electronic devices.

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Pricing & Ordering

Quantity Unit Price Ext. Price
100+ $0.5959 $59.5900
240+ $0.4890 $117.3600
370+ $0.4737 $175.2690
505+ $0.4585 $231.5425
655+ $0.4432 $290.2960
875+ $0.3973 $347.6375
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 39,000 pieces
MOQ: 100 pcs
Order Increment : 1 pcs
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