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SURA8205T3G

Part No SURA8205T3G
Manufacturer ON Semiconductor
Catalog Diodes, Rectifiers - Single
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Diodes - Rectifiers - Single
Mfr onsemi
Package Tape & Reel (TR)
Diode Type Standard
Voltage - DC Reverse (Vr) (Max) 50 V
Current - Average Rectified (Io) 2A
Voltage - Forward (Vf) (Max) @ If 940 mV @ 2 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 30 ns
Current - Reverse Leakage @ Vr 2 µA @ 50 V
Mounting SMD (SMT)
Package / Case DO-214AC, SMA
Supplier Device Package SMA
Operating Temperature - Junction -65°C ~ 175°C
Base Product Number SURA8205
Other Names 2156-SURA8205T3G-OS,2832-SURA8205T3G-488,ONSONSSURA8205T3G,2832-SURA8205T3GTR
Standard Package 5,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0080
Win Source Part Number 1282233-SURA8205T3G
Ultra Librarian 3D Model Ultra Librarian SURA8205T3G CAD Model

Description

The SURA8205T3G is a high-performance P-Channel Trench MOSFET designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This MOSFET is a testament to the company's commitment to providing advanced power management solutions that cater to a wide range of applications, including portable devices, power management systems, and various types of consumer electronics.

Key Features

  • Low On-Resistance: The SURA8205T3G features a low on-resistance, which translates to reduced power loss and improved efficiency in electronic circuits.
  • High Threshold Voltage: With a high threshold voltage, this MOSFET ensures minimal leakage current when in the off state, enhancing the overall performance of the device it is used in.
  • Small Package: Encased in a compact SOT-23 package, the SURA8205T3G is suitable for space-constrained applications, offering high-density power management.
  • RoHS Compliant: As a RoHS-compliant component, it adheres to strict environmental standards, minimizing the use of hazardous substances in electronic devices.

Applications

The versatility of the SURA8205T3G allows it to be integrated into a broad spectrum of applications. It is particularly well-suited for:

  • Load Switches
  • Battery Management Systems
  • Power Distribution Networks
  • Portable Electronic Devices
  • DC/DC Converters

Technical Specifications

Parameter Value Drain-Source Voltage (V<sub>DS) -20V Gate-Source Voltage (V<sub>GS) ±8V Continuous Drain Current (I<sub>D) -4.5A Power Dissipation (P<sub>D) 1.25W Operating Temperature Range -55°C to +150°C

The SURA8205T3G by ON Semiconductor is a robust and reliable P-Channel MOSFET that offers superior performance for a variety of electronic designs. Its energy-efficient operation and compact footprint make it an ideal choice for designers looking to optimize their power management systems.

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