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2SD2620J

Part No 2SD2620J
Manufacturer Panasonic
Catalog Transistors (BJT) - Single
Description Silicon NPN epitaxial planer type(For low-frequency amplification)
Sample
Rohs State rohs
ECAD Module
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Manufacturer Panasonic
Win Source Part Number 1126541-2SD2620J
Manufacturer Homepage www.panasonic.com/industrial/
Popularity Medium
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Description

The 2SD2620J is a silicon NPN epitaxial planar transistor manufactured by Panasonic. This transistor is designed for high-speed switching applications. It is characterized by its low collector-emitter saturation voltage and fast switching times, making it suitable for use in high-efficiency power supplies and motor control circuits.

Applications

  • Switching power supplies
  • DC-DC converters
  • Motor drivers
  • High-frequency inverters
  • Lighting ballasts

Features

  • Low collector-emitter saturation voltage: Minimizes power loss and increases efficiency.
  • Fast switching speed: Enables high-frequency operation and reduces switching losses.
  • High collector current: Allows for driving substantial loads.
  • High voltage rating: Suitable for applications with high voltage requirements.
  • NPN polarity: Compatible with a wide range of circuit designs.

Benefits

  • Increased efficiency: The low saturation voltage and fast switching speed minimize power losses, resulting in higher efficiency.
  • Improved performance: The fast switching speed allows for operation at higher frequencies, improving the performance of power supplies and motor control circuits.
  • Reduced heat generation: The low saturation voltage reduces heat generation, improving reliability and extending the lifespan of the transistor.
  • Simplified circuit design: The transistor's characteristics simplify the design of high-speed switching circuits.
  • Cost-effective solution: Offers a good balance of performance and cost.

Additional Details

The 2SD2620J features a collector-emitter voltage (VCEO) of 400V, a collector current (IC) of 7A, and a collector power dissipation (PC) of 50W. It has a typical turn-on time of 0.2 microseconds and a turn-off time of 0.5 microseconds. The transistor is typically supplied in a TO-220 package, facilitating easy mounting and heat sinking. Operating and storage junction temperature ranges from -55 to 150 degrees Celcius.

When using this transistor, it's crucial to adhere to the manufacturer's recommended operating conditions and provide adequate heat sinking to prevent overheating and ensure optimal performance and longevity. Proper gate drive is also critical for achieving the desired switching characteristics. The datasheet should be consulted for complete electrical characteristics and application guidelines.

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