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Same model may have multiple batches, images only for reference.
2SJ0536G0L Real Image
Same model may have multiple batches, images only for reference.

2SJ0536G0L

Part No 2SJ0536G0L
Manufacturer Panasonic
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V .1A SMINI-3
Datasheet
2SJ0536G0L Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Panasonic Electronic Components
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V
Gate-Source Threshold Voltage 2V @ 1μA
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 150mW (Ta)
Maximum Rds On at Id,Vgs 75 Ohm @ 10mA, 5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package SMini3-F2
Dimension SC-85
Win Source Part Number 1004646-2SJ0536G0L
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SJ0536G0L CAD Model

Description

The Panasonic Electronic Components MOSFET with Win Source Part Number 1004646-2SJ0536G0L is a P-Channel device designed for use in Discrete Semiconductor Products.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 100mA (Ta) @ 25°C
  • Gate-Source Threshold Voltage: 2V @ 1μA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id, Vgs: 75 Ohm @ 10mA, 5V
  • Package: SC-85 SMini3-F2
  • Operating Temperature: 150°C (TJ)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Status: Obsolete (EOL)
  • Supply and Demand Status: Balance

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