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DMG5640N0R

Part No DMG5640N0R
Manufacturer Panasonic
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS PREBIAS NPN/PNP SMINI6
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Panasonic Electronic Components
Packaging Reel - TR
Status Active
Transistor Polarity 1 NPN, 1 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 4.7k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 5mA, 10V
Max Vce (sat) 250mV @ 500μA, 10mA
Collector Cut-off Current(Max) 500nA
Maximum Power Dissipation 150mW
Mounting SMD (SMT)
Case / Package SMini6-F3-B
Win Source Part Number 1033682-DMG5640N0R
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian DMG5640N0R CAD Model

Description

The DMG5640N0R is a NPN/PNP complementary transistor array manufactured by Panasonic. This device integrates two transistors, one NPN and one PNP, in a single package, pre-biased with built-in resistors. This configuration simplifies circuit design by reducing the number of external components required.

Applications

  • Inverter Circuits
  • Driver Circuits
  • Switching Circuits
  • Amplifier Circuits
  • Digital Logic Circuits
  • Interface Circuits

Features

  • Complementary NPN/PNP Transistor Pair
  • Built-in Resistors for Base-Emitter and Base Resistors
  • Low Input Current
  • Small Surface Mount Package (SOT-363)
  • Reduces Component Count
  • Simplifies Circuit Design

Benefits

  • Reduces board space and component count, leading to smaller and more efficient designs.
  • Simplifies circuit design by eliminating the need for external biasing resistors.
  • Low input current makes it suitable for driving directly from logic gates.
  • Improved circuit performance due to matched transistor characteristics.
  • Reduces assembly costs and time.

Additional Details

The DMG5640N0R is housed in a small SOT-363 (SC-88) surface mount package. The built-in resistors eliminate the need for external biasing resistors, reducing the number of components required and simplifying board layout. The transistors are designed for low-current applications, making them suitable for interfacing with digital logic circuits.

NPN Transistor Characteristics:

  • Collector-Emitter Voltage (VCEO): 50V
  • Collector Current (IC): 100mA
  • Power Dissipation (PC): 150mW
  • Base Resistor (R1): 10kΩ
  • Base-Emitter Resistor (R2): 10kΩ

PNP Transistor Characteristics:

  • Collector-Emitter Voltage (VCEO): -50V
  • Collector Current (IC): -100mA
  • Power Dissipation (PC): 150mW
  • Base Resistor (R1): 47kΩ
  • Base-Emitter Resistor (R2): 47kΩ

This device offers a convenient and space-saving solution for applications requiring both NPN and PNP transistors with integrated biasing resistors.

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