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Same model may have multiple batches, images only for reference.
DMG963H10R Real Image
Same model may have multiple batches, images only for reference.

DMG963H10R

Part No DMG963H10R
Manufacturer Panasonic
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS PREBIAS NPN/PNP SSMINI5
Datasheet
DMG963H10R Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Panasonic Electronic Components
Packaging Reel - TR
Status Active
Transistor Polarity 1 NPN, 1 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 47k, 4.7k
Resistor - Emitter Base (R2) (Ohms) 47k, 10k
Typical Gain (hFE) (Min) 80 @ 5mA, 10V / 30 @ 5mA, 10V
Max Vce (sat) 250mV @ 500μA, 10mA
Collector Cut-off Current(Max) 500nA
Maximum Power Dissipation 125mW
Mounting SMD (SMT)
Case / Package SSMini5-F4-B
Win Source Part Number 1033697-DMG963H10R
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian DMG963H10R CAD Model

Description

The Panasonic Electronic Components 1033697-DMG963H10R is a dual NPN and PNP pre-biased transistor that is packaged in a SSMini5-F4-B casing.

  • Configuration: Dual NPN and PNP, Pre-Biased
  • Package: SSMini5-F4-B
  • Maximum Collector Current: 100mA
  • Collector-Emitter Breakdown Voltage: 50V
  • Maximum Power Dissipation: 125mW
  • Collector Cut-off Current: 500nA
  • Resistor Values (Base): 47k and 4.7k
  • Resistor Values (Emitter Base): 47k and 10k
  • Typical Gain: 80 @ 5mA and 10V, 30 @ 5mA and 10V
  • Maximum Vce (sat): 250mV @ 500μA and 10mA
  • Ideal Use: Discrete semiconductor products

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