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FK3503010L

Part No FK3503010L
Manufacturer Panasonic
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 100MA SMINI3
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Panasonic Electronic Components
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4V
Gate-Source Threshold Voltage 1.5V @ 1μA
Max Input Capacitance 12pF @ 3V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 150mW (Ta)
Maximum Rds On at Id,Vgs 3 Ohm @ 10mA, 4V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package SMini3-F2-B
Dimension SC-85
Win Source Part Number 114763-FK3503010L
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FK3503010L CAD Model

Description

The Panasonic Electronic Components MOSFET is a high-performance N-Channel device designed for use in discrete semiconductor products. The device has a maximum power dissipation of 150mW (Ta) and a drain-source breakdown voltage of 30V. It has a continuous drain current of 100mA (Ta) and a gate-source threshold voltage of 1.5V @ 1μA. The MOSFET has a maximum input capacitance of 12pF @ 3V and a maximum Rds On at Id,Vgs of 3 Ohm @ 10mA, 4V. The device is available in a SMini3-F2-B package and has a dimension of SC-85. It has a drive voltage of 2.5V, 4V and a maximum gate-source voltage of ±12V. The MOSFET is widely used in various applications like computers, medical, and industrial.

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