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SK8403180L

Part No SK8403180L
Manufacturer Panasonic
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 12A 8HSSO  /  N-Channel 30 V 12A (Ta), 39A (Tc) 2W (Ta), 19W (Tc) Surface Mount HSSO8-F1-B
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Panasonic Electronic Components
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 12A (Ta), 39A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 7.1mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id 3V @ 1.45mA
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1680 pF @ 10 V
Power Dissipation (Max) 2W (Ta), 19W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package HSSO8-F1-B
Package / Case 8-PowerSMD, Flat Leads
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names P16265CT,P16265TR,P16265DKR
Standard Package 3,000
Win Source Part Number 961095-SK8403180L
Ultra Librarian 3D Model Ultra Librarian SK8403180L CAD Model

Description

The 961095-SK8403180L is an N-channel MOSFET transistor designed for use in discrete semiconductor products.

  • Drain to Source Voltage: 30 V
  • Continuous Drain Current: 12A (Ta) or 39A (Tc)
  • Rds On (Max) @ Id, Vgs: 7.1mOhm @ 8.5A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 10 V
  • Package: 8-PowerSMD, Flat Leads
  • Supplier Device Package: HSSO8-F1-B
  • Power Dissipation (Max): 2W (Ta), 19W (Tc)
  • Temperature Range: 150°C (TJ)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

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