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UNR221F00L Panasonic
Same model may have multiple batches, images only for reference.

UNR221F00L

Part No UNR221F00L
Manufacturer Panasonic
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 200MW MINI3
Datasheet
UNR221F00L Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Panasonic Electronic Components
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 4.7k
Resistor - Emitter Base (R2) (Ohms) 10k
Typical Gain (hFE) (Min) 30 @ 5mA, 10V
Max Vce (sat) 250mV @ 300μA, 10mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 150MHz
Maximum Power Dissipation 200mW
Mounting SMD (SMT)
Case / Package Mini3-G1
Win Source Part Number 1116422-UNR221F00L
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian UNR221F00L CAD Model

Description

The Panasonic Electronic Components UNR221F00L is an NPN pre-biased transistor designed for discrete semiconductor products applications.

  • Mounting: SMD (SMT)
  • Maximum Current Collector: 100mA
  • VCEO maximum collector-emitter breakdown voltage: 50V
  • Maximum Vce (sat): 250mV @ 300μA, 10mA
  • Collector Cut-Off Current(Max): 500nA
  • Typical Gain (hFE) (Min): 30 @ 5mA, 10V
  • Power Dissipation: 200mW

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