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Same model may have multiple batches, images only for reference.
UNR311100L Real Image
Same model may have multiple batches, images only for reference.

UNR311100L

Part No UNR311100L
Manufacturer Panasonic
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 100MW SSSMINI3
Datasheet
UNR311100L Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Panasonic Electronic Components
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity PNP - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Resistor - Emitter Base (R2) (Ohms) 10k
Typical Gain (hFE) (Min) 35 @ 5mA, 10V
Max Vce (sat) 250mV @ 300μA, 10mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 80MHz
Maximum Power Dissipation 100mW
Mounting SMD (SMT)
Case / Package SSSMini3-F1
Win Source Part Number 036057-UNR311100L
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian UNR311100L CAD Model

Description

The Panasonic Electronic Components 036057-UNR311100L transistor is a pre-biased, PNP component with a maximum collector current of 100mA and a collector-emitter breakdown voltage of 50V.

  • Transistor Type: pre-biased, PNP
  • Maximum Collector Current: 100mA
  • Collector-Emitter Breakdown Voltage: 50V
  • Maximum Power Dissipation: 100mW
  • Typical Gain (hFE): 35 @ 5mA, 10V
  • Maximum Collector Cut-Off Current: 500nA
  • Maximum Vce (sat): 250mV @ 300μA, 10mA
  • Resistor-Base (R1): 10k ohms
  • Resistor-Emitter Base (R2): 10k ohms
  • Supply and Demand Status: balanced

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