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Same model may have multiple batches, images only for reference.
UNR32A100L Real Image
Same model may have multiple batches, images only for reference.

UNR32A100L

Part No UNR32A100L
Manufacturer Panasonic
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 100MW SSSMINI3
Datasheet
UNR32A100L Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Panasonic Electronic Components
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 80mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Resistor - Emitter Base (R2) (Ohms) 10k
Typical Gain (hFE) (Min) 35 @ 5mA, 10V
Max Vce (sat) 250mV @ 300μA, 10mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 150MHz
Maximum Power Dissipation 100mW
Mounting SMD (SMT)
Case / Package SSSMini3-F1
Win Source Part Number 036066-UNR32A100L
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian UNR32A100L CAD Model

Description

The Panasonic Electronic Components UNR32A100L is a NPN Pre-Biased transistor, which is designed to operate at a frequency of 150MHz.

  • Frequency: 150MHz
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Current Collector: 80mA
  • Typical Gain: 35 @ 5mA, 10V
  • Package: SSSMini3-F1
  • Mounting: SMD (SMT) technology
  • Status: Obsolete and has reached its end-of-life (EOL)
  • Maximum Power Dissipation: 100mW
  • Collector Cut-Off Current: 500nA
  • Maximum Vce (sat): 250mV @ 300μA, 10mA

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