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BC848C_R1_00001

Part No BC848C_R1_00001
Manufacturer Panjit
Catalog Transistors (BJT) - Single
Description TRANS NPN 30V 0.1A SOT23 / Bipolar (BJT) Transistor NPN 30 V 100 mA 330 mW Surface Mount SOT-23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr Panjit International Inc.
Package Tape & Reel
Transistor Type NPN
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 30 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V
Power - Max 330 mW
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0095
Other Names 3757-BC848C_R1_00001TR,3757-BC848C_R1_00001CT,3757-BC848C_R1_00001DKR
Standard Package 3,000
Win Source Part Number 958728-BC848C_R1_00001
Ultra Librarian 3D Model Ultra Librarian BC848C_R1_00001 CAD Model

Description

The BC848C_R1_00001 is a general-purpose NPN bipolar junction transistor (BJT) manufactured by Panjit. It is commonly used in a wide variety of electronic applications for switching and amplification purposes. As a discrete component, it provides a cost-effective solution for circuit designs requiring signal amplification or switching capabilities.

Applications

  • General-purpose amplification
  • Switching circuits
  • Signal processing
  • Audio amplification stages
  • Small signal applications

Features

  • NPN transistor
  • High current gain (hFE)
  • Low collector-emitter saturation voltage
  • Small signal amplification
  • Lead-Free / RoHS Compliant

Benefits

  • Cost-effective solution for amplification and switching needs
  • Easy to integrate into existing circuits
  • Reliable performance in a variety of applications
  • Enhances signal strength in audio and small signal circuits
  • Suitable for both through-hole and surface mount designs depending on the package

Technical Specifications

The BC848C transistor features a collector-emitter voltage (VCEO) of 30V, a collector current (IC) of 100mA, and a power dissipation of 250mW. The current gain (hFE) for the BC848C variant typically ranges from 420 to 800. Its transition frequency (fT) is around 100MHz. The operating and storage junction temperature range is -65°C to +150°C. The specific package for BC848C_R1_00001 should be verified based on the datasheet from Panjit, but it is commonly available in SOT-23.

It's essential to consult the official datasheet from Panjit for precise electrical characteristics, thermal performance, and package dimensions to ensure proper integration and optimal performance within the intended application. The datasheet also specifies the recommended soldering conditions and handling precautions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,970+ $0.0293 $57.7210
4,785+ $0.0242 $115.7970
7,430+ $0.0233 $173.1190
10,205+ $0.0226 $230.6330
13,230+ $0.0219 $289.7370
17,650+ $0.0196 $345.9400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,800 pieces
MOQ: 1970 pcs
Order Increment : 1 pcs
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