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PJD1NA60B_L2_00001

Name: PJD1NA60B_L2_00001
Brand: Panjit
SKU: 1315540
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	PJD1NA60B_L2_00001
Manufacturer	Panjit
Catalog	Transistors - FETs, MOSFETs - RF
Sample
Rohs State
ECAD Module
	Add to BOM List New List Existing List This product has been added to your list. List name
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Products specifications Report Issue?

Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr	Panjit International Inc.
Package	Tape & Reel
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	10Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id	3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	6.1 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	210 pF @ 25 V
Power Dissipation (Max)	28W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting	SMD (SMT)
Supplier Device Package	TO-252
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
MSL Level	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Win Source Part Number	1315540-PJD1NA60B_L2_00001
Ultra Librarian 3D Model	Ultra Librarian PJD1NA60B_L2_00001 CAD Model

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Description

The 1315540-PJD1NA60B_L2_00001 is a N-Channel MOSFET that can be used in various applications such as power supplies, motor control, and lighting.

Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250μA
Power Dissipation (Max): 28W (Tc)
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 25 V
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252

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PJD1NA60B_L2_00001

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