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Same model may have multiple batches, images only for reference.
PJD4NA65H_L2_00001 Real Image
Same model may have multiple batches, images only for reference.

PJD4NA65H_L2_00001

Part No PJD4NA65H_L2_00001
Manufacturer Panjit
Catalog Transistors - FETs, MOSFETs - RF
Description 650V N-CHANNEL MOSFET / N-Channel 650 V 3A (Ta) 34W (Tc) Surface Mount TO-252
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Panjit International Inc.
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.75Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16.1 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 423 pF @ 25 V
Power Dissipation (Max) 34W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-252
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names 3757-PJD4NA65H_L2_00001DKR,3757-PJD4NA65H_L2_00001CT,3757-PJD4NA65H_L2_00001TR
Standard Package 3,000
Win Source Part Number 1085250-PJD4NA65H_L2_00001
Ultra Librarian 3D Model Ultra Librarian PJD4NA65H_L2_00001 CAD Model

Description

The N-Channel MOSFET (Metal Oxide) PJD4NA65H_L2_00001 is a high-voltage transistor used in various electronic devices.

  • Drain-to-Source Voltage: 650V
  • Continuous Drain Current: 3A (Ta)
  • Rds On (Max) @ Id, Vgs: 3.75Ohm @ 1.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250μA
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Gate Charge (Qg) (Max) @ Vgs: 16.1 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 423 pF @ 25 V
  • Ideal for: Power supply applications, motor control, and other high voltage circuits

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