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TGF2021-01

Part No TGF2021-01
Manufacturer Qorvo US Inc.
Catalog OEM Parts (T - Z)
Description RF Power Transistor, 0 to 12 GHz, 1 W, 11 dB, 12 V, GaAs, 0.57 X 0.53 X 0.10 mm, pHEMT
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Continuous Drain Current (ID) 300 mA
Drain to Source Voltage (Vdss) 12 V
Frequency 12 GHz
Gain 11 dB
Gate to Source Voltage (Vgs) -14 V
Maximum Operating Temperature 150 °C
RoHS Compliant
Win Source Part Number 1099213-TGF2021-01
Categories OEM Parts(T-Z)
Manufacturer Qorvo US Inc.
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian TGF2021-01 CAD Model

Description

The TGF2021-01 is a high-electron-mobility transistor (HEMT) from Qorvo US Inc.

  • Maximum Drain-Source Voltage: 12V
  • Maximum Operating Frequency: 12GHz
  • Gain: 11dB
  • Maximum Output Power: 24dBm
  • Package: 6-lead SMT
  • Applications: microwave amplifiers, oscillators, and mixers

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