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RN1102MFV,L3F

Part No RN1102MFV,L3F
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 50V 0.15W VESM
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Resistor - Emitter Base (R2) (Ohms) 10k
Typical Gain (hFE) (Min) 50 @ 10mA, 5V
Max Vce (sat) 300mV @ 500μA, 5mA
Collector Cut-off Current(Max) 500nA
Maximum Power Dissipation 150mW
Mounting SMD (SMT)
Case / Package VESM
Win Source Part Number 096519-RN1102MFV,L3F
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 8k pcs
Ultra Librarian 3D Model Ultra Librarian RN1102MFV,L3F CAD Model

Description

The Toshiba Semiconductor and Storage RN1102MFV,L3F is a pre-biased NPN transistor with a maximum current collector of 100mA and a maximum power dissipation of 150mW.

  • Type: pre-biased NPN transistor
  • Maximum Current Collector: 100mA
  • Maximum Power Dissipation: 150mW
  • Typical Gain (hFE) (Min): 50 @ 10mA, 5V
  • Collector Cut-off Current (Max): 500nA
  • Package: VESM
  • Popularity: medium
  • Supply and Demand Status: sufficient
  • Packaging: reel - TR
  • Quantity per Package: 8k pcs

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,485+ $0.0337 $50.0445
3,175+ $0.0315 $100.0125
4,920+ $0.0305 $150.0600
7,045+ $0.0284 $200.0780
9,160+ $0.0273 $250.0680
11,455+ $0.0262 $300.1210
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 82,610 pieces
MOQ: 1485 pcs
Order Increment : 1 pcs
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