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Same model may have multiple batches, images only for reference.
2SA812B-T1B-AT Renesas Electronics America
Same model may have multiple batches, images only for reference.

2SA812B-T1B-AT

Part No 2SA812B-T1B-AT
Manufacturer Renesas Electronics America
Catalog Transistors (BJT) - Single
Description 2SA812B-T1B-AT - PNP SILICON EPI
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr Renesas Electronics America
Package Bulk
Product Status Obsolete
Transistor Type PNP
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 90 @ 1mA, 6V
Power - Max 200 mW
Frequency - Transition 180MHz
Temperature Range - Operating 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package 3-MINIMOLD
Standard Package 1 pcs
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Win Source Part Number 728826-2SA812B-T1B-AT
Ultra Librarian 3D Model Ultra Librarian 2SA812B-T1B-AT CAD Model

Description

The 728826-2SA812B-T1B-AT is an obsolete bipolar transistor designed for discrete semiconductor applications.

  • Power Rating: 200mW
  • Collector-Emitter Breakdown Voltage: 50V
  • Collector Current Rating: 100mA
  • DC Current Gain: 90 @ 1mA
  • Temperature Range: Up to 150°C
  • Mounting Type: Surface Mountable
  • Package: TO-236-3
  • Manufacturer: Renesas Electronics America

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Quantity Unit Price Ext. Price
450+ $0.1287 $57.9150
1,095+ $0.1057 $115.7415
1,695+ $0.1023 $173.3985
2,335+ $0.0990 $231.1650
3,020+ $0.0958 $289.3160
4,040+ $0.0859 $347.0360
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Availability: 8,160 pieces
MOQ: 450 pcs
Order Increment : 1 pcs
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