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2SC2149

Part No 2SC2149
Manufacturer Renesas Electronics America
Catalog Transistors (BJT) - Single
Description MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products
Family Transistors(BJT) - Single
Manufacturer Renesas Electronics America
Win Source Part Number 155170-2SC2149
Popularity Medium
Supply and Demand Status Limited
Family Name 2SC2149
Introduction Date March 19, 1997
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian 2SC2149 CAD Model

Description

Product Overview

The 2SC2149 is a high-frequency NPN silicon transistor designed to deliver exceptional performance in RF amplification applications. With a strong emphasis on reliability and efficiency, this component is suited for a wide range of electronics, especially in high-frequency circuits.

Features and Benefits

  • High Transition Frequency: The 2SC2149 offers high transition frequencies, making it ideal for RF applications and signal amplification.
  • Low Collector-Emitter Saturation Voltage: It ensures minimal power loss during operation, leading to enhanced efficiency.
  • Durable Construction: Built for robust performance in a variety of electronic environments.
  • Temperature Stability: With its stable thermal properties, it can operate effectively under various temperature conditions.

Applications/Projects

  • RF Signal Amplifiers
  • High-Frequency Circuitry
  • Communication Devices
  • Oscillator Circuits
  • Automatic Gain Control Amplifiers

Additional Details

Utilizing the 2SC2149 in your projects can result in significant improvements in signal clarity and amplification efficiency. Its compact design and exceptional electrical characteristics make it a preferred choice for electronic enthusiasts and professionals seeking reliable performance in RF-related applications.

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Shipping Information

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