The 2SD2217AZ is an NPN silicon epitaxial transistor manufactured by Renesas Electronics America. This transistor is designed for high-frequency amplification and switching applications. It is commonly used in RF amplifiers, oscillators, and high-speed switching circuits. Its high cutoff frequency and low output capacitance make it suitable for demanding high-frequency applications.

Applications

• RF amplifiers
• Oscillators
• Mixers
• High-speed switching circuits
• VHF/UHF applications

Features

• High cutoff frequency (fT = 7 GHz)
• Low output capacitance
• High power gain
• NPN Silicon Epitaxial Transistor
• Small SOT-343 package

Benefits

• Improved performance in high-frequency circuits
• Enhanced signal amplification
• Reduced signal distortion
• Compact design for space-constrained applications
• Stable operation in demanding RF environments

Additional Details

The 2SD2217AZ has a collector-emitter voltage (VCEO) of 12V, a collector current (IC) of 70mA, and a power dissipation of 200mW. The DC current gain (hFE) is typically in the range of 50 to 200. It is housed in a small SOT-343 surface mount package, making it ideal for compact electronic devices. The high cutoff frequency ensures that the transistor performs well at high frequencies without significant performance degradation. The low output capacitance helps to minimize signal distortion and maintain signal integrity.

The 'AZ' probably denotes a specific gain bin or packaging option. Refer to the Renesas datasheet for the detailed electrical characteristics and application notes.