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Same model may have multiple batches, images only for reference.
2SK3712-Z-E1-AZ Real Image
Same model may have multiple batches, images only for reference.

2SK3712-Z-E1-AZ

Part No 2SK3712-Z-E1-AZ
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 9A TO252
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Renesas Electronics America
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Rds On (Max) @ Id, Vgs 580mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 450 pF @ 10 V
Mounting Type Surface Mount
Supplier Device Package TO-252 (MP-3Z)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Standard Package 1 pcs
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 736414-2SK3712-Z-E1-AZ
Ultra Librarian 3D Model Ultra Librarian 2SK3712-Z-E1-AZ CAD Model

Description

The 2SK3712-Z-E1-AZ is a single N-channel MOSFET transistor from Renesas Electronics America.

  • Application: Discrete semiconductor
  • Package: Surface mount, TO-252-3 (DPak)
  • Maximum Drain-to-Source Voltage (Vdss): 250V
  • Continuous Drain Current (Id) @ 25°C: 9A
  • Rds On (Max) @ Id, Vgs: 580mOhm @ 4.5A, 10V
  • Gate-Source Voltage Threshold (Vgs(th)) @ 1mA: 4.5V
  • Gate Charge (Qg) @ 10V: 14nC
  • Input Capacitance (Ciss) @ 10V: 450pF
  • HTSUS Code: 8541.29.0095
  • Status: Active

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.7313 $60.5955
85+ $1.4207 $120.7595
130+ $1.3768 $178.9840
175+ $1.3329 $233.2575
225+ $1.2878 $289.7550
300+ $1.1550 $346.5000
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Availability: 6,000 pieces
MOQ: 35 pcs
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