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Same model may have multiple batches, images only for reference.
H7N1002LS-E Real Image
Same model may have multiple batches, images only for reference.

H7N1002LS-E

Part No H7N1002LS-E
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V LDPAK / Trans MOSFET N-CH Si 100V 75A 3-Pin(2+Tab) LDPAK(S)-1
Datasheet
H7N1002LS-E Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel package
Channel Type Type N
Technology MOSFET
Drain Source Voltage 100V
Current - Continuous Drain (Id) @ 25°C 75A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate Charge (Qg) (Maximum) @ Vgs 155nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 9700pF @ 10V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 100W (Tc)
Rds On (Maximum) @ Id, Vgs 10 mOhm @ 37.5A, 10V
Operating Temperature Range 150°C (TJ)
Mounting SMD
Manufacturer Package 4-LDPAK
Package SC-83
Win Source Part Number 775573-H7N1002LS-E
Popularity Medium
Supply and Demand Status Limited
Family Name H7N1002LS
Introduction Date March 20, 2006
ECCN EAR99
Estimated EOL Date 2028
Ultra Librarian 3D Model Ultra Librarian H7N1002LS-E CAD Model

Description

The Renesas Electronics America H7N1002LS-E MOSFET.

  • Package: 4-LDPAK
  • Continuous Drain Current: 75A (Ta)
  • Drain-Source Voltage: 100V
  • Gate Charge: 155nC @ 10V
  • Input Capacitance: 9700pF @ 10V
  • Family: H7N1002LS
  • Category: Discrete semiconductor products
  • Drive Voltage: 4.5V, 10V
  • Maximum Gate Trigger Voltage: ±20V
  • Type: N-Channel
  • Rds On (Max): 10 mOhm @ 37.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • ECCN: EAR99
  • Estimated EOL: 2028
  • Supply and Demand: Limited
  • Alternative Parts: AOB296L, STH80N10LF7-2AG, IRFS4610TRLPBF, STB120NF10

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