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H7N1002LS-E

Name: H7N1002LS-E
Brand: Renesas Electronics America
SKU: 775573
Availability: InStock
Rating: 4.91 (5 reviews)

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Part No	H7N1002LS-E
Manufacturer	Renesas Electronics America
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 100V LDPAK / Trans MOSFET N-CH Si 100V 75A 3-Pin(2+Tab) LDPAK(S)-1
Datasheet	H7N1002LS-E Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Renesas Electronics America
Packaging	Reel package
Channel Type Type	N
Technology	MOSFET
Drain Source Voltage	100V
Current - Continuous Drain (Id) @ 25°C	75A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Gate Charge (Qg) (Maximum) @ Vgs	155nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds	9700pF @ 10V
Vgs (Maximum)	±20V
Power Dissipation (Maximum)	100W (Tc)
Rds On (Maximum) @ Id, Vgs	10 mOhm @ 37.5A, 10V
Operating Temperature Range	150°C (TJ)
Mounting	SMD
Manufacturer Package	4-LDPAK
Package	SC-83
Win Source Part Number	775573-H7N1002LS-E
Popularity	Medium
Supply and Demand Status	Limited
Family Name	H7N1002LS
Introduction Date	March 20, 2006
ECCN	EAR99
Estimated EOL Date	2028
Ultra Librarian 3D Model	Ultra Librarian H7N1002LS-E CAD Model

Alternative Products

Description

The Renesas Electronics America H7N1002LS-E MOSFET.

Package: 4-LDPAK
Continuous Drain Current: 75A (Ta)
Drain-Source Voltage: 100V
Gate Charge: 155nC @ 10V
Input Capacitance: 9700pF @ 10V
Family: H7N1002LS
Category: Discrete semiconductor products
Drive Voltage: 4.5V, 10V
Maximum Gate Trigger Voltage: ±20V
Type: N-Channel
Rds On (Max): 10 mOhm @ 37.5A, 10V
Operating Temperature: 150°C (TJ)
ECCN: EAR99
Estimated EOL: 2028
Supply and Demand: Limited
Alternative Parts: AOB296L, STH80N10LF7-2AG, IRFS4610TRLPBF, STB120NF10

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