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HAT1108C-EL-E

Part No HAT1108C-EL-E
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description HAT1108C  -  Pch Single Power Mo
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Renesas Electronics America
Package Bulk
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V
Rds On (Max) @ Id, Vgs 194mOhm @ 750mA, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 3 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 160 pF @ 10 V
Power Dissipation (Max) 830mW (Ta)
Temperature Range - Operating 150°C
Mounting Type Surface Mount
Supplier Device Package 6-CMFPAK
Package / Case 6-SMD, Flat Leads
Standard Package 1 pcs
Win Source Part Number 141117-HAT1108C-EL-E
Ultra Librarian 3D Model Ultra Librarian HAT1108C-EL-E CAD Model

Description

The HAT1108C-EL-E is a P-Channel MOSFET transistor used in discrete semiconductor products, specifically in the category of Transistors - FETs, MOSFETs - Single FETs, MOSFETs. This transistor is designed for efficient power management and is manufactured by Renesas Electronics America.

  • Vdss: 30V
  • Id (at 25°C): 1.5A
  • Rds On (at Id=750mA, Vgs=10V): 194mOhm
  • Vgs(th) (at Id=1mA): 2V
  • Power Dissipation: 830mW
  • Mounting Type: Surface Mount
  • Package: 6-SMD, Flat Leads
  • Qg (at Vgs=10V): 3nC
  • Ciss (at Vds=10V): 160pF
  • Maximum Vgs: ±20V
  • Operating Temperature: Up to 150°C
  • Product Status: Obsolete

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Pricing & Ordering

Quantity Unit Price Ext. Price
385+ $0.1513 $58.2505
930+ $0.1247 $115.9710
1,430+ $0.1213 $173.4590
1,985+ $0.1167 $231.6495
2,555+ $0.1132 $289.2260
3,410+ $0.1016 $346.4560
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 65,990 pieces
MOQ: 385 pcs
Order Increment : 1 pcs
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