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Same model may have multiple batches, images only for reference.
HAT2141H-EL Real Image
Same model may have multiple batches, images only for reference.

HAT2141H-EL

Part No HAT2141H-EL
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 15A 5LFPAK
Datasheet
HAT2141H-EL Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 15A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 7V, 10V
Max Gate Charge 46nC @ 10V
Max Input Capacitance 3200pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 20W (Tc)
Maximum Rds On at Id,Vgs 27.5 mOhm @ 7.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package LFPAK
Dimension SC-100, SOT-669
Win Source Part Number 067795-HAT2141H-EL
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian HAT2141H-EL CAD Model

Description

The Renesas Electronics America HAT2141H-EL is an N-channel MOSFET.

  • Type: N-channel MOSFET
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 15A @ 25°C
  • Maximum Rds On: 27.5 mOhm @ 7.5A, 10V
  • Package: LFPAK
  • RoHS Compliant: Yes
  • Operating Temperature: Up to 150°C
  • Maximum Gate-Source Voltage: ±20V

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