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Same model may have multiple batches, images only for reference.
HAT2143H-EL-E Renesas Electronics America
Same model may have multiple batches, images only for reference.

HAT2143H-EL-E

Part No HAT2143H-EL-E
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 40A 5LFPAK
Datasheet
HAT2143H-EL-E Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 40A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Max Gate Charge 40nC @ 10V
Max Input Capacitance 2450pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 20W (Tc)
Maximum Rds On at Id,Vgs 6.1 mOhm @ 20A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package LFPAK
Dimension SC-100, SOT-669
Win Source Part Number 1042356-HAT2143H-EL-E
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian HAT2143H-EL-E CAD Model

Description

The Renesas Electronics America HAT2143H-EL-E is an N-channel MOSFET transistor designed for use in discrete semiconductor products.

  • Power Dissipation: 20W (Tc)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 40A (Ta) @ 25°C
  • Maximum Rds On @ Id,Vgs: 6.1 mOhm @ 20A, 10V
  • Maximum Gate Charge: 40nC @ 10V
  • Maximum Input Capacitance: 2450pF @ 10V
  • Package: LFPAK
  • Mounting Technology: SMD (SMT)
  • Supply and Demand Status: Balanced

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