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HAT2164H-EL-E

Part No HAT2164H-EL-E
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 60A 5LFPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 60A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Max Gate Charge 50nC @ 4.5V
Max Input Capacitance 7600pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 30W (Tc)
Maximum Rds On at Id,Vgs 3.1 mOhm @ 30A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package LFPAK
Dimension SC-100, SOT-669
Win Source Part Number 067799-HAT2164H-EL-E
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian HAT2164H-EL-E CAD Model

Description

The Renesas HAT2164H-EL-E is an active N-Channel MOSFET with a maximum power dissipation of 30W (Tc). It belongs to the Discrete Semiconductor Products category.

  • Popularity: High
  • Supply and Demand: Balanced
  • Alternative Parts: PSMN2R0-30YL; HAT2164H; RJK0301DPB-00-J0; HAT2164H-EL-E
  • Packaging: Reel - TR
  • Mounting: SMD (SMT)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Operating Temperature: 150°C (TJ)
  • Case/Package: LFPAK
  • Dimensions: SC-100, SOT-669
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 60A (Ta) @ 25°C
  • Max Gate Charge: 50nC @ 4.5V
  • Max Input Capacitance: 7600pF @ 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On: 3.1 mOhm @ 30A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $1.0383 $62.2980
120+ $0.9714 $116.5680
185+ $0.9379 $173.5115
270+ $0.8709 $235.1430
345+ $0.8374 $288.9030
435+ $0.8039 $349.6965
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 35,964 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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