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HAT2165N-EL-E

Part No HAT2165N-EL-E
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 55A 8LFPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Renesas Electronics America
Package Bulk
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 55A (Ta)
Rds On (Max) @ Id, Vgs 3.6mOhm @ 27.5A, 10V
Gate Charge (Qg) (Max) @ Vgs 33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds 5180 pF @ 10 V
Power Dissipation (Max) 30W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-LFPAK-iV
Package / Case 8-PowerSOIC (0.154", 3.90mm Width)
Standard Package 2,500 pcs
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 141222-HAT2165N-EL-E
Ultra Librarian 3D Model Ultra Librarian HAT2165N-EL-E CAD Model

Description

The 141222-HAT2165N-EL-E is a N-Channel MOSFET (Metal Oxide) transistor designed for use in discrete semiconductor products.

  • Drain to Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 55A @ 25°C
  • On-Resistance (Rds On): 3.6mOhm @ 27.5A and 10V
  • Gate Charge (Qg): 33nC @ 4.5V
  • Input Capacitance (Ciss): 5180pF @ 10V
  • Package Type: 8-PowerSOIC (Surface Mountable)
  • Manufacturer: Renesas Electronics America
  • Status: Obsolete
  • Applications: Power supplies, motor control, and lighting systems

Note: This product is no longer in production and may not be readily available.

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Pricing & Ordering

Quantity Unit Price Ext. Price
20+ $2.9060 $58.1200
49+ $2.3839 $116.8111
75+ $2.3100 $173.2500
104+ $2.2349 $232.4296
134+ $2.1610 $289.5740
179+ $1.9369 $346.7051
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,000 pieces
MOQ: 20 pcs
Order Increment : 1 pcs
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