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Same model may have multiple batches, images only for reference.
HAT2203C-EL-E Renesas Electronics America
Same model may have multiple batches, images only for reference.

HAT2203C-EL-E

Part No HAT2203C-EL-E
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description HAT2203C-EL-E - SILICON N CHANNE
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Renesas Electronics America
Package Bulk
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 90mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id 1.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 1.8 nC @ 4.5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 165 pF @ 10 V
Power Dissipation (Max) 830mW (Ta)
Temperature Range - Operating 150°C
Mounting Type Surface Mount
Supplier Device Package 6-CMFPAK
Package / Case 6-SMD, Flat Leads
Standard Package 1 pcs
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 141261-HAT2203C-EL-E
Ultra Librarian 3D Model Ultra Librarian HAT2203C-EL-E CAD Model

Description

The 141261-HAT2203C-EL-E is an N-channel MOSFET transistor manufactured by Renesas Electronics America. Designed for discrete semiconductor applications.

  • Package: Bulk (1 piece)
  • Vdss: 20V
  • Id (at 25°C): 2A
  • Rds On (Max): 90mOhm @ 1A, 4.5V
  • Qg (at 4.5V): 1.8nC
  • Mounting Type: Surface Mount
  • Package: 6-SMD, Flat Leads

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.5778 $52.0020
215+ $0.4741 $101.9315
330+ $0.4593 $151.5690
450+ $0.4445 $200.0250
585+ $0.4297 $251.3745
780+ $0.3852 $300.4560
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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