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N0412N-S19-AY

Part No N0412N-S19-AY
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 100A TO220  /  N-Channel 40 V 100A (Ta) 1.5W (Ta), 119W (Tc) Through Hole TO-220
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Renesas Electronics America Inc
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 100A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.7mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs 100 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5550 pF @ 25 V
Power Dissipation (Max) 1.5W (Ta), 119W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
Base Product Number N0412N-S19
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Other Names -1161-N0412N-S19-AY
Standard Package 1,000
Win Source Part Number 1081387-N0412N-S19-AY
Ultra Librarian 3D Model Ultra Librarian N0412N-S19-AY CAD Model

Description

The Renesas N0412N-S19 is a N-Channel MOSFET transistor with a maximum drain to source voltage of 40V and a continuous drain current of 100A (Ta) @ 25°C.

  • Maximum Drain to Source Voltage: 40V
  • Continuous Drain Current: 100A (Ta) @ 25°C
  • Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
  • Package: TO-220-3
  • Mounting Type: Through Hole
  • Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5550 pF @ 25 V

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