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Same model may have multiple batches, images only for reference.
N0602N-S19-AY Real Image
Same model may have multiple batches, images only for reference.

N0602N-S19-AY

Part No N0602N-S19-AY
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 100A TO-220
Datasheet
N0602N-S19-AY Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 100A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Max Gate Charge 133nC @ 10V
Max Input Capacitance 7730pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.5W (Ta), 156W (Tc)
Maximum Rds On at Id,Vgs 4.6 mOhm @ 50A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3 Isolated Tab
Win Source Part Number 1081491-N0602N-S19-AY
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian N0602N-S19-AY CAD Model

Description

The N0602N-S19-AY is a MOSFET transistor manufactured by Renesas Electronics America.

  • Supply and Demand Status: sufficient
  • Maximum Gate Charge: 133nC @ 10V
  • Maximum Input Capacitance: 7730pF @ 25V
  • Commonly Used In: power supplies, DC-DC converters, and motor control circuits
  • Package: TO-220-3
  • Feature: isolated tab
  • Maximum Continuous Drain Current (25°C): 100A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.9267 $57.8010
75+ $1.5809 $118.5675
115+ $1.5315 $176.1225
160+ $1.4821 $237.1360
205+ $1.4327 $293.7035
270+ $1.2845 $346.8150
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,000 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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