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NP100P04PDG-E1-AY

Part No NP100P04PDG-E1-AY
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 40V 100A TO-263 / Trans MOSFET P-CH 40V 100A Automotive 3-Pin(2+Tab) D2PAK T/R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel package
Channel Type Type P
Technology MOSFET
Drain Source Voltage 40V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Maximum) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs 320nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 15100pF @ 10V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 1.8W (Ta), 200W (Tc)
Rds On (Maximum) @ Id, Vgs 3.5 mOhm @ 50A, 10V
Operating Temperature Range 175°C (TJ)
Mounting SMD
Manufacturer Package TO-263
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 790767-NP100P04PDG-E1-AY
Popularity Medium
Supply and Demand Status Limited
Family Name NP100P04PDG
Introduction Date May 07, 2007
ECCN EAR99
Country of Origin Japan, Malaysia
Estimated EOL Date 2022
Ultra Librarian 3D Model Ultra Librarian NP100P04PDG-E1-AY CAD Model

Description

The Renesas Electronics America NP100P04PDG-E1-AY is a MOSFET technology-based semiconductor device.

  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Continuous Drain Current: 100A (Tc) @ 25°C
  • Drain-Source Voltage: 40V
  • Gate-Source Voltage: ±20V
  • Power Dissipation: 1.8W (Ta), 200W (Tc)
  • Input Capacitance (Ciss): 15100pF @ 10V
  • Gate Charge (Qg): 320nC @ 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $5.0876 $50.8760
24+ $4.1745 $100.1880
38+ $4.0440 $153.6720
52+ $3.9136 $203.5072
67+ $3.7831 $253.4677
89+ $3.3918 $301.8702
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,493 pieces
MOQ: 10 pcs
Order Increment : 1 pcs
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