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NP180N055TUK-E1-AY

Part No NP180N055TUK-E1-AY
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 180A TO-263 / Trans MOSFET N-CH 55V 180A Automotive 8-Pin(7+Tab) D2PAK T/R
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Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel package
Channel Type Type N
Technology MOSFET
Drain Source Voltage 55V
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 294nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 16050pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 1.8W (Ta), 348W (Tc)
Rds On (Maximum) @ Id, Vgs 1.4 mOhm @ 90A, 10V
Operating Temperature Range 175°C (TJ)
Mounting SMD
Manufacturer Package TO-263-7
Package TO-263-7, D2Pak (6 Leads + Tab)
Win Source Part Number 790770-NP180N055TUK-E1-AY
Popularity Medium
Supply and Demand Status Limited
Quantity per package 1
Family Name NP180N055TUK
Introduction Date December 05, 2011
ECCN EAR99
Country of Origin Japan
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian NP180N055TUK-E1-AY CAD Model

Description

The Renesas Electronics America NP180N055TUK-E1-AY is a MOSFET transistor from Renesas Electronics America.

  • Drain Current: 180A (Tc)
  • Drain-Source Voltage: 55V
  • Package: TO-263-7, D2Pak (6 Leads + Tab)
  • Channel Type: N
  • Gate Charge (Qg): 294nC @ 10V
  • Input Capacitance (Ciss): 16050pF @ 25V
  • Rds On (Maximum) @ Id, Vgs: 1.4 mOhm @ 90A, 10V
  • Supply Voltage Range: 1.6 V to 5.5 V
  • Maximum Power Dissipation: 1.8W (Ta), 348W (Tc)
  • Estimated EOL Date: 2029
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.4487 $50.7045
85+ $1.1887 $101.0395
135+ $1.1516 $155.4660
180+ $1.1144 $200.5920
235+ $1.0773 $253.1655
315+ $0.9658 $304.2270
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Availability: 200 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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