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Same model may have multiple batches, images only for reference.
NP36P06SLG-E1 Real Image
Same model may have multiple batches, images only for reference.

NP36P06SLG-E1

Part No NP36P06SLG-E1
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 36A TO-252
Datasheet
NP36P06SLG-E1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Max Gate Charge 52nC @ 10V
Max Input Capacitance 3200pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.2W (Ta), 56W (Tc)
Maximum Rds On at Id,Vgs 30 mOhm @ 18A, 10V
Temperature Range - Operating 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252 (MP-3ZK)
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 258912-NP36P06SLG-E1
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian NP36P06SLG-E1 CAD Model

Description

The Renesas Electronics America NP36P06SLG-E1 is a P-Channel MOSFET with a maximum power dissipation of 1.2W (Ta), 56W (Tc).

  • Manufacturer: Renesas Electronics America
  • Product: NP36P06SLG-E1
  • Type: P-Channel MOSFET
  • Maximum Power Dissipation: 1.2W (Ta), 56W (Tc)
  • Status: The supply and demand status is limited.
  • Package: This component is packaged in a TO-252 (MP-3ZK) case
  • Win Source Part Number: 258912.

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