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Same model may have multiple batches, images only for reference.
NP40N10PDF-E1-AY Real Image
Same model may have multiple batches, images only for reference.

NP40N10PDF-E1-AY

Part No NP40N10PDF-E1-AY
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOS FIELD EFFECT TRANSISTOR
Datasheet
NP40N10PDF-E1-AY Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Channel Type Type N
Technology MOSFET
Drain Source Voltage 100V
Current - Continuous Drain (Id) @ 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Maximum) @ Id 2.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 71nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 3150pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 1.8W (Ta), 120W (Tc)
Rds On (Maximum) @ Id, Vgs 27 mOhm @ 20A, 10V
Operating Temperature Range 175°C (TJ)
Mounting SMD
Manufacturer Package TO-263 (D2Pak)
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Homepage www.renesas.com
Win Source Part Number 733134-NP40N10PDF-E1-AY
Popularity Medium
Supply and Demand Status Limited
Family Name NP40N10PDF
Introduction Date June 07, 2011
ECCN EAR99
Country of Origin Japan
Estimated EOL Date End of life (Obsolete)
Ultra Librarian 3D Model Ultra Librarian NP40N10PDF-E1-AY CAD Model

Description

The Renesas Electronics America NP40N10PDF-E1-AY MOSFET is a high-quality electronic component from Renesas Electronics America.

  • Current Continuous Drain: 40A (Tc) @ 25°C
  • Operating Temperature: 175°C (TJ)
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Mounting: SMD
  • Gate Charge (Qg) (Maximum) @ Vgs: 71nC @ 10V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 3150pF @ 25V
  • Power Dissipation (maximum): 1.8W (Ta), 120W (Tc)
  • Rds On (Maximum) @ Id, Vgs: 27 mOhm @ 20A, 10V

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