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NP55N055SUG-E1

Part No NP55N055SUG-E1
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 55A TO-252
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Max Gate Charge 90nC @ 10V
Max Input Capacitance 5250pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.2W (Ta), 77W (Tc)
Maximum Rds On at Id,Vgs 10 mOhm @ 28A, 10V
Temperature Range - Operating 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252 (MP-3ZK)
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 209296-NP55N055SUG-E1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NP55N055SUG-E1 CAD Model

Description

The supply and demand status of this product is balance.

  • Status: The supply and demand status of this product is balance.
  • Technology: This MOSFET technology-based product
  • Maximum Power Dissipation: 1.2W (Ta) and 77W (Tc)
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 55A (Tc) @ 25°C
  • Maximum Rds On @ Id, Vgs: 10 mOhm @ 28A, 10V.
  • Category: discrete semiconductor product
  • Case/Package: TO-252 (MP-3ZK)
  • Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63.
  • Gate-Source Threshold Voltage: not available.
  • Maximum Gate Charge: not available.
  • Information: For more information about this product, please refer to its specifications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
230+ $0.2529 $58.1670
560+ $0.2079 $116.4240
865+ $0.2010 $173.8650
1,195+ $0.1940 $231.8300
1,535+ $0.1883 $289.0405
2,055+ $0.1686 $346.4730
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,500 pieces
MOQ: 230 pcs
Order Increment : 1 pcs
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