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Same model may have multiple batches, images only for reference.
NP80N04MHE-S18-AY Renesas Electronics America
Same model may have multiple batches, images only for reference.

NP80N04MHE-S18-AY

Part No NP80N04MHE-S18-AY
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 80A TO220  /  N-Channel 40 V 80A (Tc) 1.8W (Ta), 120W (Tc) Through Hole TO-220
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Renesas Electronics America Inc
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Rds On (Max) @ Id, Vgs 8mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 3300 pF @ 25 V
Power Dissipation (Max) 1.8W (Ta), 120W (Tc)
Temperature Range - Operating 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
ECCN EAR99
HTSUS 8541.29.0095
Other Names 2156-NP80N04MHE-S18-AY-RE,RENRNSNP80N04MHE-S18-AY
Standard Package 50
Win Source Part Number 1082621-NP80N04MHE-S18-AY
Ultra Librarian 3D Model Ultra Librarian NP80N04MHE-S18-AY CAD Model

Description

The Renesas Electronics America NP80N04MHE-S18-AY is an N-channel MOSFET transistor that is a part of the discrete semiconductor products family.

  • Drain to Source Voltage: 40 V
  • Continuous Drain Current: 80A @ 25°C
  • Status: obsolete

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114+ $3.0608 $348.9312
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