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Same model may have multiple batches, images only for reference.
NP80N04PLG-E1B-AY Renesas Electronics America
Same model may have multiple batches, images only for reference.

NP80N04PLG-E1B-AY

Part No NP80N04PLG-E1B-AY
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 80A TO-263
Datasheet
NP80N04PLG-E1B-AY Datasheet
Sample
Rohs State rohs
ECAD Module
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Popularity Medium
Win Source Part Number 1083348-NP80N04PLG-E1B-AY
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Case / Package TO-263
Mounting SMD (SMT)
Temperature Range - Operating 175°C (TJ)
Maximum Rds On at Id,Vgs 4.5 mOhm @ 40A, 10V
Power Dissipation (Max) 1.8W (Ta), 115W (Tc)
Maximum Gate-Source Voltage ±20V
Max Input Capacitance 6900pF @ 25V
Max Gate Charge 135nC @ 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Continuous Drain Current at 25°C 80A (Tc)
Drain-Source Breakdown Voltage 40V
Technology MOSFET
Polarity N-Channel
Status Obsolete(EOL)
Packaging Reel - TR
Manufacturer Renesas Electronics America
Categories Discrete Semiconductor Products
Ultra Librarian 3D Model Ultra Librarian NP80N04PLG-E1B-AY CAD Model

Description

The NP80N04PLG-E1B-AY is an N-channel MOSFET from Renesas Electronics America.

  • Package: TO-263
  • Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 80A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Gate Charge: 135nC @ 10V
  • Maximum Input Capacitance: 6900pF @ 25V
  • Maximum Rds On @ Id,Vgs: 4.5 mOhm @ 40A, 10V
  • Status: Obsolete
  • ECCN: EAR99

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90+ $1.2904 $116.1360
140+ $1.2501 $175.0140
195+ $1.2097 $235.8915
250+ $1.1693 $292.3250
335+ $1.0484 $351.2140
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