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Same model may have multiple batches, images only for reference.
RJK0301DPB-02#J0 Real Image
Same model may have multiple batches, images only for reference.

RJK0301DPB-02#J0

Part No RJK0301DPB-02#J0
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 60A 5-LFPAK
Datasheet
RJK0301DPB-02#J0 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 60A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Max Gate Charge 32nC @ 4.5V
Max Input Capacitance 5000pF @ 10V
Maximum Gate-Source Voltage +16V, -12V
Power Dissipation (Max) 65W (Tc)
Maximum Rds On at Id,Vgs 2.8 mOhm @ 30A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 5-LFPAK
Dimension SC-100, SOT-669
Win Source Part Number 131052-RJK0301DPB-02#J0
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian RJK0301DPB-02#J0 CAD Model

Description

The supply and demand status is limited.

  • Description: This MOSFET technology based component is perfect for various electronic applications.
  • Power Dissipation: 65W (Tc)
  • Continuous Drain Current: 60A (Ta) @ 25°C
  • Maximum Rds On (at Id,Vgs): 2.8 mOhm @ 30A, 10V
  • Package: Reel - TR
  • Mounting Technology: SMD (SMT)
  • Operating Temperature: 150°C (TJ)
  • Case / Package Dimension: 5-LFPAK and SC-100, SOT-669 respectively
  • Drain-Source Breakdown Voltage: 30V
  • Maximum Gate-Source Voltage: +16V, -12V

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Quantity Unit Price Ext. Price
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42+ $2.8124 $118.1208
64+ $2.7246 $174.3744
88+ $2.6369 $232.0472
114+ $2.5491 $290.5974
152+ $2.2857 $347.4264
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